Affirmation of minority carrier lifetime during industrial process of crystalline silicon solar cell by microwave phtonconductance decay method

Minority carrier lifetime was determined by MW-PCD method following the industry process well and truly. The wafer as-cut without any treatment showed an effective lifetime about 1.2mus. Then it rose to 2.5~5mus after one side was passivated by silicon nitride. The average lifetime with double layer passivation sharply increased to 48mus average, even over 100mus locally. The escape of hydrogen was discovered after sintering. The electron collection ability between Ag and Al was also compared by effective lifetime testing.