DocumentCode
3293807
Title
A High Productivity and Low Topography W CMP Process Enabled by a Dual Endpoint System and Novel Pad Conditioning
Author
Wang, James C. ; Ko, Sen-Hou ; Miller, Paul ; Hsu, Wei-Yung
Author_Institution
Appl. Mater. Inc., Sunnyvale
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
195
Lastpage
198
Abstract
The growth of the flash memory market is driving the priority for new cost reduction methods for tungsten CMP. This paper focuses on productivity enhancements that boost the wafer throughput by 82% while achieving good results for topography, rate stability, non uniformity, and defects. A dual endpoint system is described that utilizes both an eddy current sensor for real-time thickness feedback and an optical sensor to signal transition points between materials. The dual endpoint system enables an improvement in platen time balancing and contributes to better erosion results. In addition, a new approach is developed for ex situ pad conditioning that results in a further reduction in cycle time.
Keywords
chemical mechanical polishing; cost reduction; eddy currents; electric sensing devices; flash memories; optical sensors; planarisation; surface topography; surface topography measurement; thickness measurement; tungsten; W; chemical mechanical planarization process; cost reduction methods; cycle time reduction; dual endpoint system; eddy current sensor; erosion; flash memory market growth; low topography tungsten CMP process; novel pad conditioning; optical sensor; real-time thickness feedback; real-time tungsten thickness measurements; signal transition points; Costs; Eddy currents; Flash memory; Optical sensors; Productivity; Sensor phenomena and characterization; Stability; Surfaces; Throughput; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493059
Filename
4493059
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