The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode

Author

Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbel, Joe C. ; Yoder, P.D.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA

fYear

2008

fDate

Sept. 9 2008-Oct. 3 2008

Firstpage

82

Lastpage

85

Abstract

Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. At 310 MHz modulation frequency the third-order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to 21 GHz. Voltage dependent nonlinear responsivity is found to be the limiting factor for the IP3 at low frequency, while the voltage and photocurrent dependent nonlinear capacitance is responsible for the decreasing IP3 with increasing frequency. The physical origins of the nonlinear responsivity and capacitance are investigated.

Keywords

gallium compounds; indium compounds; photodiodes; InGaAs-InP; Voltage dependent nonlinear responsivity; frequency 310 MHz; modified uni-traveling carrier photodiode; photocurrent dependent nonlinear capacitance; third-order intermodulation distortion; two-tone setup; voltage dependent nonlinear capacitance; Capacitance; Epitaxial layers; Frequency modulation; Indium gallium arsenide; Indium phosphide; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Voltage; InGaAs; linearity; nonlinear capacitance; nonlinear responsivity; photodiode (PD); third-order intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave photonics, 2008. jointly held with the 2008 asia-pacific microwave photonics conference. mwp/apmp 2008. international topical meeting on

Conference_Location

Gold Coast, Qld

Print_ISBN

978-1-4244-2168-8

Electronic_ISBN

978-1-4244-2169-5

Type

conf

DOI

10.1109/MWP.2008.4666640

Filename

4666640