• DocumentCode
    3293936
  • Title

    Root Cause Mechanism for Delamination/Cracking in Stacked Die Chip Scale Packages

  • Author

    Prack, Edward R. ; Fan, Xuejun

  • Author_Institution
    Intel Corp., Chandler
  • fYear
    2006
  • fDate
    25-27 Sept. 2006
  • Firstpage
    219
  • Lastpage
    222
  • Abstract
    A key challenge in the development of ultra-thin stacked die chip scale packages is to meet package performance requirements without delamination. Interfacial delamination and cohesive failure are particular concerns. The root cause of this type of failure is difficult to discern, even with extensive root cause analysis and focused DOEs. Through comprehensive simulation and material characterization, three key parameters were identified which affected the package performance, i.e., substrate thickness, reflow time and substrate diffusivity. The root cause model established the relationship between moisture uptake, material properties such as diffusivity and porosity, and vapor pressure buildup. Two scenarios with regard to package behavior during soldering reflow are predicted.
  • Keywords
    chip scale packaging; cracks; delamination; failure analysis; cohesive failure; delamination/cracking; material properties; porosity; reflow time; root cause mechanism; soldering reflow; stacked die chip scale packages; substrate diffusivity; substrate thickness; vapor pressure; Chip scale packaging; Delamination; Material properties; Microassembly; Moisture; Plastic packaging; Semiconductor device modeling; Soldering; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-4-9904138-0-4
  • Type

    conf

  • DOI
    10.1109/ISSM.2006.4493066
  • Filename
    4493066