DocumentCode :
3293936
Title :
Root Cause Mechanism for Delamination/Cracking in Stacked Die Chip Scale Packages
Author :
Prack, Edward R. ; Fan, Xuejun
Author_Institution :
Intel Corp., Chandler
fYear :
2006
fDate :
25-27 Sept. 2006
Firstpage :
219
Lastpage :
222
Abstract :
A key challenge in the development of ultra-thin stacked die chip scale packages is to meet package performance requirements without delamination. Interfacial delamination and cohesive failure are particular concerns. The root cause of this type of failure is difficult to discern, even with extensive root cause analysis and focused DOEs. Through comprehensive simulation and material characterization, three key parameters were identified which affected the package performance, i.e., substrate thickness, reflow time and substrate diffusivity. The root cause model established the relationship between moisture uptake, material properties such as diffusivity and porosity, and vapor pressure buildup. Two scenarios with regard to package behavior during soldering reflow are predicted.
Keywords :
chip scale packaging; cracks; delamination; failure analysis; cohesive failure; delamination/cracking; material properties; porosity; reflow time; root cause mechanism; soldering reflow; stacked die chip scale packages; substrate diffusivity; substrate thickness; vapor pressure; Chip scale packaging; Delamination; Material properties; Microassembly; Moisture; Plastic packaging; Semiconductor device modeling; Soldering; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-4-9904138-0-4
Type :
conf
DOI :
10.1109/ISSM.2006.4493066
Filename :
4493066
Link To Document :
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