Title :
The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM
Author :
Meng, Haijie ; Feng, Shiwei ; Zhang, Yuezong ; Zhang, Guangchen ; Guo, Chunsheng ; Deng, Haitao
Author_Institution :
Sch. of Electron Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
Based on traditional transmission line method (TLM), an improved method was used to investigate the failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact under high-current density (>105 A/cm2). A novel structure is proposed and fabricated. The degradation of the ohmic contact was studied by the novel structure. According to analyzing the energy spectrum of the sample before and after degradation, it is concluded that Aluminium diffusion is the main factor that destroyed the good ohmic contact.
Keywords :
aluminium; gallium compounds; gold; nickel; ohmic contacts; titanium; transmission line theory; GaN-Ti-Al-Ni-Au; energy spectrum; failure mechanism; high-current density; transmission line method; Current density; Degradation; Electrodes; Etching; Failure analysis; Gallium nitride; Gold; Ohmic contacts; Power transmission lines; Transmission lines;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232607
