DocumentCode
3293992
Title
A method to evaluate the skew by data dependent gate loading
Author
Jiang, Yanfeng ; Zhang, Xiaobo ; Yang, Bing ; Ju, Jiaxin
Author_Institution
Microelectron. Center, North China Univ. of Technol., Beijing, China
fYear
2009
fDate
6-10 July 2009
Firstpage
451
Lastpage
454
Abstract
In this paper, the skew by data dependent gate loading has been analyzed. A method based on the concept of MOS parametric capacitance has been proposed. According to different data dependent of the MOS transistor, including transient channel charge and Miller effects, the values of capacitance in different data loadings have been extracted. Two clock tree routes have been analyzed by using the gate loading effect. Results revealed that the simulation result including the gate loading approaches to the actual ones closely.
Keywords
MOSFET; MOS parametric capacitance; MOS transistor; Miller effect; data dependent gate loading; simulation result; transient channel charge; Capacitance; Clocks; Data mining; Delay effects; Instruments; Integrated circuit interconnections; MOSFET circuits; Microelectronics; Temperature dependence; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232609
Filename
5232609
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