DocumentCode :
3294141
Title :
8-bit multiplier simulation experiments investigating the use of power supply transient signals for the detection of CMOS defects
Author :
Plusquellic, James F. ; Germida, Amy ; Yan, Zheng
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
fYear :
1999
fDate :
36465
Firstpage :
68
Lastpage :
76
Abstract :
Transient Signal Analysis is a digital device testing method that is based on the analysis of voltage transients at multiple test points. In this paper the power supply transient signals from simulation experiments on an 8-bit multiplier are analyzed at multiple test points in both the time and frequency domain. Linear regression analysis is used to separate and identify the signal variations introduced by defects and the variations caused by changes in fabrication process parameters. Defects were introduced into the simulation model by adding material (shorts) or removing material (opens) from the layout. Process parameter fluctuations were modeled by randomly varying transistor and circuit parameters individually and in groups over the range of +/-25% of the nominal parameters. The results of the analysis show that it is possible to distinguish between defect-free devices with injected process variation and defective devices
Keywords :
CMOS digital integrated circuits; circuit simulation; fault simulation; frequency-domain analysis; integrated circuit modelling; integrated circuit testing; logic testing; multiplying circuits; semiconductor process modelling; statistical analysis; time-domain analysis; transient analysis; transients; 8 bit; 8-bit multiplier simulation experiments; CMOS defect detection; defect-free devices; defective devices; digital device testing method; fabrication process parameters; frequency domain; injected process variation; layout; linear regression analysis; multiple test points; opens; power supply transient signals; process parameter fluctuation modeling; randomly varying circuit parameters; randomly varying transistor parameters; shorts; signal variations; signature waveforms; simulation model; time domain; transient signal analysis; voltage transients; Analytical models; Fabrication; Frequency domain analysis; Linear regression; Power supplies; Signal analysis; Signal processing; Testing; Transient analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 1999. DFT '99. International Symposium on
Conference_Location :
Albuquerque, NM
ISSN :
1550-5774
Print_ISBN :
0-7695-0325-x
Type :
conf
DOI :
10.1109/DFTVS.1999.802871
Filename :
802871
Link To Document :
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