Title :
Reliability problems investigation during the pLEDMOS fabrication
Author :
Qian, Qinsong ; Wu, Hong ; Liu, Siyang ; Sun, Weifeng ; Shi, Longxing
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
An optimized process design of the p-type lateral extended drain MOS transistor (pLED-MOS) for PDP driver ICs is developed. The following issues such as surface damage, parasitic BJT punch-through phenomenon, impurity segregation effect and creep behavior of the breakdown voltage are investigated. Various approaches are therefore sought in order to solve these reliability problems by optimizing the process and device architecture. The methods have been verified by the TCAD simulation and experimental results.
Keywords :
MOSFET; bipolar transistors; electric breakdown; integrated circuit reliability; PDP driver IC; TCAD simulation; breakdown voltage; creep behavior; impurity segregation effect; p-type lateral extended drain MOS transistor; pLEDMOS fabrication; parasitic BJT punch-through phenomenon; reliability problems investigation; surface damage; Creep; Design optimization; Diffusion processes; Fabrication; Implants; Impurities; Mass production; Process design; Temperature; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232616
