Title :
Photoacoustic investigations of the impurity states in silicon by using a piezoelectric transducer
Author :
Ikari, T. ; Miyazaki, K. ; Futagami, K.
Author_Institution :
Dept. of Electron., Miyazaki Univ., Japan
Abstract :
Photoacoustic (PA) measurements of p-Si single crystals near the optical absorption edge were carried out by using a PZT as a detector. A pronounced peak at 1.07 eV appears in addition to the plateau. By considering a hole carrier concentration dependence and a compensation effect by thermally generated donors on the PA spectra, it is concluded that the observed peak is due to the transitions involving boron acceptor impurities. Low temperature spectra down to 90 K also support this conclusion
Keywords :
boron; elemental semiconductors; impurity electron states; photoacoustic spectra; silicon; PZT; Si:B; compensation effect; hole carrier concentration dependence; impurity states; optical absorption edge; p-type semiconductor; piezoelectric transducer; thermally generated donors; Absorption; Boron; Crystals; Etching; Impurities; Piezoelectric transducers; Silicon; Spectroscopy; Surface contamination; Temperature;
Conference_Titel :
Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
Conference_Location :
Orlando, FL
DOI :
10.1109/ULTSYM.1991.234230
