Title :
A Novel methodology for dopant contrast enhancement in Si Doped Area
Author :
Zhu, Zhu ; Tong, Jinyu ; Lung, Lai Li ; Li, Kite ; Chang, S.J.
Author_Institution :
Failure Anal. Lab., Wuhan Xinxin Semicond. Manuf. Int. Corp. (WXIC), Wuhan, China
Abstract :
As well known, it is quite difficult to obtain dopant related information by SEM due to weak built-in potentials especially in Si. In this paper, utilize doped poly to enhance dopant contrast (DC) and shows successfully DC in doped Si area, and the model is also proposed for phenomenon explanation.
Keywords :
elemental semiconductors; scanning electron microscopy; semiconductor doping; silicon; SEM; Si:Jk; built-in potentials; dopant contrast enhancement; silicon doped area; Semiconductor process modeling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232620
