Title :
Failure mechanism of Sn3.0Ag0.5Cu flip-chip solder joints under electric current stress
Author :
Lu, Yu-Dong ; He, Xiao-Qi ; En, Yun-Fei ; Wang, Xin
Author_Institution :
China Electron. Product Reliability & Environ. Test Res. Inst., Guangzhou, China
Abstract :
Electromigration in flip-chip bumps of Sn3.0Ag0.5Cu has been studied at current density of 2.03times104 A/cm2. Three potential failure modes induced by electromigration in SnAgCu flip-chip bumps were investigated in terms of microstructural evolution. According to IPC standard or U.S. Military Standard (MIL-STD), all theses three kinds of damages would be determined failure in failure-analysis procedures for microcircuits.
Keywords :
copper alloys; electromigration; failure analysis; flip-chip devices; silver alloys; solders; tin alloys; SnAgCu; electric current stress; electromigration; failure analysis; flip-chip solder joints; Cathodes; Copper; Current; Electromigration; Failure analysis; Flip chip; Flip chip solder joints; Industrial electronics; Soldering; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232622