Title :
Failure tests on 64 Mb SDRAM in radiation environment
Author :
Bertazzoni, S. ; Cardarilli, G.C. ; Piergentili, D. ; Salmeri, M. ; Salsano, A. ; Di Giovenale, D. ; Grande, G.C. ; Marinucci, P. ; Sperandei, S. ; Bartalucci, S. ; Massenga, G. ; Ricci, M. ; Bidoli, V. ; De Francesco, D. ; Picozza, P.G. ; Rovelli, A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Italy
Abstract :
In this paper we analyze the failures of Commercial Off The Shelf (COTS) 64 Mb Synchronous DRAM (SDRAM) in a radiation environment. The experimental setup, the test procedure, and the results of three different test runs at the Catania LNS-INFN cyclotron are described in some detail. Three kinds of heavy ions were used to test devices under different conditions of energy release that generates different amount of charge inside the chip. In particular, 30 MeV/AMU 93Nb (LETSi~21 MeV/(mg/cm2), RSi~397 μm), 30 MeV/AMU 120Sn (LETSi~30 MeV/(mg/cm2), RSi~370 μm) and 15 MeV/AMU 197Au (LETSi~90 MeV/(mg/cm2), RSi ~95 μm) were used. In all cases, the bare dies were directly bonded on an AF4 carrier to avoid plastic and lead-frame shielding. Different failure types that could affect the operations of a system based on this device were registered. To verify that the characteristics of the events depend on the zone struck by the particle, a specific test was performed
Keywords :
DRAM chips; failure analysis; integrated circuit reliability; integrated circuit testing; radiation effects; 64 Mbit; 120Sn; 197Au; 93Nb; AF4 carrier; Au; COTS device; Catania LNS-INFN cyclotron; Nb; SDRAM; Sn; commercial off the shelf device; failure tests; heavy ions; radiation environment; synchronous DRAM; test procedure; Bonding; Cyclotrons; Failure analysis; Gold; Niobium; Performance evaluation; Plastics; SDRAM; Testing; Tin;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 1999. DFT '99. International Symposium on
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7695-0325-x
DOI :
10.1109/DFTVS.1999.802881
