Study on the reliability of Ni/Au/AlGaN/GaN HEMTs at high temperature

Fundamentals of current transports of the Ni/Au/AlGaN/GaN HEMTs have been studied under the temperature between 27degC and 250degC. It´s found that the maximum drain-source current (I_DS) decreases with rising temperature, and the temperature dependent of I_DS has a negative coefficient of -0.314mA/mm.degC. The decrease in mobility is considered to be the main cause of this deterioration. It´s also found that a rise in temperature accompanies an increase in barrier height and a decrease in ideality factor. The remarkable finding is that reverse leakage current increases first and then decreases with rising temperature.