DocumentCode
3294501
Title
The Optimization of Chamber Cleaning in the Etching Equipment
Author
Yajima, Teruo ; Watanabe, Munenori ; Kawabata, Youichirou ; Ohtake, Koji ; Endo, Minoru ; Aoyama, Masaki ; Imaoka, Kazunori
Author_Institution
Spansion Japan Co., Ltd., Aizuwakamatu
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
328
Lastpage
331
Abstract
This study is an investigation of the way to reduce the particle count by using optical emission spectroscopy (O.E.S.). From the results of O.E.S. analysis, it is revealed that the chamber cleaning seriously affects the particle count. The result of our experiment shows that the particle count depends both on CF4 gas flow rate and bias power. By changing the cleaning conditions to lower bias power and higher CF4 flow rate, the particle count and defect count are decreased.
Keywords
etching; CF4 gas flow rate; chamber cleaning; defect count; etching equipment; optical emission spectroscopy; particle count; Cleaning; Electrons; Etching; Fluid flow; Plasma applications; Plasma chemistry; Plasma sources; Silicon; Spectroscopy; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493097
Filename
4493097
Link To Document