DocumentCode :
3294501
Title :
The Optimization of Chamber Cleaning in the Etching Equipment
Author :
Yajima, Teruo ; Watanabe, Munenori ; Kawabata, Youichirou ; Ohtake, Koji ; Endo, Minoru ; Aoyama, Masaki ; Imaoka, Kazunori
Author_Institution :
Spansion Japan Co., Ltd., Aizuwakamatu
fYear :
2006
fDate :
25-27 Sept. 2006
Firstpage :
328
Lastpage :
331
Abstract :
This study is an investigation of the way to reduce the particle count by using optical emission spectroscopy (O.E.S.). From the results of O.E.S. analysis, it is revealed that the chamber cleaning seriously affects the particle count. The result of our experiment shows that the particle count depends both on CF4 gas flow rate and bias power. By changing the cleaning conditions to lower bias power and higher CF4 flow rate, the particle count and defect count are decreased.
Keywords :
etching; CF4 gas flow rate; chamber cleaning; defect count; etching equipment; optical emission spectroscopy; particle count; Cleaning; Electrons; Etching; Fluid flow; Plasma applications; Plasma chemistry; Plasma sources; Silicon; Spectroscopy; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-4-9904138-0-4
Type :
conf
DOI :
10.1109/ISSM.2006.4493097
Filename :
4493097
Link To Document :
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