Title :
Reliability evaluation of power VDMOSFET
Author :
Bai, Yun-Xia ; Guo, Chun-Sheng ; Feng, Shi-Wei ; Ding, Kai-Kai ; Zhuang, Si-Xiang ; Su, Rong
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
The specific application of power devices has imposed the requirement for intensive investigation of their reliability. In this paper we have investigated the reliability and failure mechanism of power VDMOS. In constant-stress accelerated life test, the three different temperatures (150degC, 165degC and 180degC) are imposed on the devices. Under the bias VDS=7.5V, IDS=0.8A, and the channel temperature T=117degC, the average lifetime is 3.67times106 h , the activation energy E is 0.54eV, and the main failure mechanism is gate damage.
Keywords :
MOS integrated circuits; power MOSFET; semiconductor device reliability; constant-stress accelerated life test; current 0.8 A; electron volt energy 0.54 eV; failure mechanism; power VDMOSFET; reliability evaluation; temperature 117 degC; temperature 150 degC; temperature 165 degC; temperature 180 degC; voltage 7.5 V; Acceleration; Degradation; FETs; Failure analysis; Integral equations; Life estimation; Life testing; Power semiconductor switches; Stress; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232635
