Title :
Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier
Author :
Guo, Wei ; Li, Mingliang ; Dong, Shurong
Author_Institution :
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
Effect of metal routing on the robustness of silicon controlled rectifier (SCR) is studied for bi-direction electrostatic discharge (ESD) protection applications. Depending on the type of metal routing, different failure currents It2 can exist in the positive and negative directions due to the asymmetrical current conductions in the multi-finger dual-direction SCR. Transmission line pulsing (TLP) results are included in support of the analysis.
Keywords :
electrostatic discharge; rectifiers; ESD robustness; bi-direction electrostatic discharge protection; dual-direction silicon controlled rectifier; metal routing; multi-finger dual-direction SCR; transmission line pulsing; Anodes; Bidirectional control; Cathodes; Electrostatic discharge; Protection; Robust control; Robustness; Routing; Thyristors; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232637
