Title :
AlGaN/GaN HEMT device structure optimization design
Author :
Zhou, Xiaopeng ; Cheng, Zhiqun ; Hu, Sha ; Zhou, Weijian ; Zhang, Sheng
Author_Institution :
Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A novel Composite-Channel AlxGa1-xN/AlyGa1-yN/ GaN HEMT is designed and optimized. The influence of two-dimensional electron gas and electric field on device structure parameter is obtained from the self-consistent solution basing on theory of semiconductor energy band and quantum well. The influence of the layer structure of the device on its performance is obtained from simulation of TCAD software. Combining with results of theory analysis and simulation results, the optimization structure Al0.31Ga0.69N/-Al0.04Ga0.96N/GaN HEMT is proposed. The simulation results show that the device with gate length of 1 mum and gate width of 100 mum has the maximum transconductance of 300 mS/mm and the little fluctuation in the gate voltage from -2V to 1V that shows the excellent linearity of the device, the maximum current density of 1300 mA/mm, the cut-off frequency of 11.5 GHz and a maximum oscillation frequency of 32.5 GHz.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; high electron mobility transistors; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; AlGaN-GaN; HEMT device structure optimization design; electric field on device structure parameter; frequency 11.5 GHz; frequency 32.5 GHz; quantum well; semiconductor energy band; voltage -2 V to 1 V; Aluminum gallium nitride; Analytical models; Cutoff frequency; Design optimization; Electrons; Gallium nitride; HEMTs; Quantum mechanics; Software performance; Transconductance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232638
