Title :
Patterning of vertical thin film emitters in field emission arrays and their emission characteristics
Author :
Karpov, L.D. ; Genelev, A.P. ; Drach, V.A. ; Zasemkov, V.S. ; Mirgorodski, Y.V. ; Tikhonski, A.N.
Author_Institution :
SI Diamond Technol. Inc., Austin, TX, USA
Abstract :
The present paper concerns a new manufacturing process for emission structures with Vertical Thin Film Emitters (VTFE). Simple methods of directional vacuum deposition for different materials were employed in the above process. VTFE were fabricated via deposition of Cr, Ti layers on Cu posts with Cr caps, located on a substrate, followed by dissolution of Cu posts. Thus produced emission structures had VTFE density of 2.88×106 emitters/cm2. The height of VTFE ungated structures was ~5.5-5.8 μm. The extraction field of Ti VTFE structures was ~15-20 V/μm. The possibility to employ a foregoing process for gated structures with VTFE was demonstrated
Keywords :
chromium; copper; dissolving; titanium; vacuum deposition; vacuum microelectronics; 5.5 to 5.8 micron; Ti-Cr-Cu; directional vacuum deposition; dissolution; emission characteristics; extraction field; field emission arrays; ungated structures; vertical thin film emitters; Chemical vapor deposition; Chromium; Dielectric substrates; Dielectric thin films; Fabrication; Field emitter arrays; Manufacturing processes; Resists; Shape; Transistors;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601873
