Crystal defects analysis using nano-probe technologies

With the device size shrinking to deep sub-micron region, silicon crystal defects become critical to device parameters. It also brings FA (Failure Analysis) great challenges on timely and exactly identifying the defect by EFA (Electrical Failure Analysis) and PFA (Physical Failure Analysis) methods. In this paper, we report the FA´s on the single bit failure of a 6T-SRAM using nano-probe technologies for electrical localization. PFA methods, such as SEM (Scanning Electron Microscope), TEM (Transmission Electron Microscope), and chemical etching were performed for failure visualization.