Title :
Interaction and ohmic contact between NiCr alloy and a-Si:H thin films at low temperatures
Author :
Cai, Haihong ; Li, Wei ; Li, Zhi ; Gong, Yuguang ; Jiang, Yadong
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An array of transfer length mode (TLM) structures were designed and made on electrically isolated phosphourous -doped hydrogenated amorphous silicon (a-Si:H) thin films. Annealing effects on NiCr/a-Si:H contacts in the temperature rang from 100 degC to 400degC were studied. Electrical measurements were performed to characterize the interaction of the contact between NiCr alloy and doped a-Si:H thin films. It is found that the specific contact resistance decreases with elevated annealing temperatures. Annealing of NiCr/a-Si:H contacts at 400degC in N2 leads to a lower specific contact resistance of 4.15 Omegaldrcm2 due to good adhesion of the NiCr/a-Si:H interface. The NiCr/a-Si:H contacts could not be scratched with a tungsten carbide scriber, nor delaminated from the a-Si:H substrate.
Keywords :
annealing; chromium alloys; contact resistance; hydrogen; nickel alloys; ohmic contacts; semiconductor thin films; semiconductor-metal boundaries; silicon; NiCr-Si:H; annealing effect; contact interaction; electrically isolated thin films; elevated annealing temperatures; ohmic contact; specific contact resistance; temperature 100 degC to 400 degC; thin film; transfer length mode structures array; Amorphous silicon; Annealing; Contact resistance; Electric variables measurement; Electrical resistance measurement; Ohmic contacts; Performance evaluation; Semiconductor thin films; Temperature distribution; Transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232650
