• DocumentCode
    3294813
  • Title

    Study on bonding process parameters affecting Cu bump shape based on design of experiment Method

  • Author

    Li, Tianming ; Huang, Chunyue

  • Author_Institution
    Dept. of Sci. & Technol., Guilin Coll. of Aerosp. Technol., Guilin, China
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    Three parameters, bonding time, bonding force and ultrasonic energy were chosen as three controlled factors. By using an L9(34)orthogonal array the copper stud bump solder joints which have 9 different combinations of process parameters were designed. The numerical models of 9 copper stud bumps were developed using the ANSYS/LS-DYNA. By using the element of SOLID164 finite element the shaping process was simulated to get the copper stud bump diameter and height under the nine different process parameters combinations. Copper stud bump diameter and height were analysed through range analysis and variance analysis. The result shows that of the three process parameters, the copper height was affected by bonding time, bonding force and ultrasonic energy in a descending order and the copper diameter was affected by bonding force, bonding time and ultrasonic energy in a descending order. With 95% confidence, bonding time and bonding force has a significant effect on the copper height whereas ultrasonic energy has little; bonding force and ultrasonic energy has a significant effect on the copper diameter whereas bonding time has little.
  • Keywords
    copper; finite element analysis; flip-chip devices; solders; ultrasonic bonding; ANSYS-LS-DYNA model; Cu; SOLID164 finite element analysis model; bonding process parameter; copper stud bump solder joints; flip-chip technology; range analysis; ultrasonic energy; variance analysis; Analysis of variance; Bonding forces; Bonding processes; Copper; Design methodology; Force control; Numerical models; Process design; Shape; Soldering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232651
  • Filename
    5232651