Title :
Endpoint Detection of Dry Cleaning on LPCVD poly-Si Process
Author :
Asada, Shinobu ; Obata, Shu ; Tsuruhara, Makoto
Author_Institution :
NEC Fabserve Ltd., Sagamihara
Abstract :
It is necessary to clean the furnace tube utilizing etching gas after several deposition cycles of LPCVD poly-Si process. But the total cleaning time is uncertain factor, because the etching rate of the deposited film varied with the deposition condition, and it leads to the extension of over- etching time. In this paper, we established the novel cleaning method utilizing the detection of the endpoint of cleaning, even though the amount of the deposited film is unknown.
Keywords :
chemical vapour deposition; elemental semiconductors; etching; semiconductor thin films; silicon; surface cleaning; LPC VD poly-Si process; Si; dry cleaning; etching rate; Cleaning; Delay effects; Delay lines; Dry etching; Fluid flow; Furnaces; National electric code; Semiconductor devices; Semiconductor films; Temperature control;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493119
