IEEE recommended practice for powering and grounding electronic equipment. (Color Book Series - Emerald Book)

Author

da Costa Gouveia-Filho, Oscar ; Schneider, Marcio Cherem ; Galup-Montoro, Carlos

Author_Institution

Dept. de Engenharia Eletrica, UFSC, Sao Carlos, Brazil

fYear

1999

fDate

1999

Firstpage

18

Lastpage

21

Abstract

This paper presents a new compact model for the intrinsic charges and (trans) capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans) capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans) capacitances are shown

Keywords

MOSFET; capacitance; carrier mobility; semiconductor device models; surface potential; carrier velocity saturation; channel length modulation; compact model; drain induced barrier lowering; intrinsic charges; short-channel MOS transistors; transcapacitances; Digital circuits; Electrical capacitance tomography; Equations; Geometry; Instruments; Low voltage; MOSFET circuits; Postal services; Rain; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits and Systems Design, 1999. Proceedings. XII Symposium on

Conference_Location

Natal

Print_ISBN

0-7695-0387-X

Type

conf

DOI

10.1109/SBCCI.1999.802959

Filename

802959