Performance and application of SiCp/Al composites for electronic packaging

For the purpose of electronic packaging, homogeneous and void free SiCp/Al composites with high volume fraction of reinforcement (up to 73%) are fabricated by pressure infiltration technology. The CTEs of composites can be tailored in the range of 7.3-9.7~10^-6/degC to match the CTEs of ceramic substrates or semiconductors. And their thermal conductivities are higher than 120 W/(mdegE). Because of low density (~3 g/cm³), the specific strength and specific stiffness are much higher than those of the preferred packaging materials - Kovar and copper, making them desirable for weight-critical systems. This helps to diminish electronic components while maintaining their strength. Some diodes are produced with nickel plated SiCp/Al baseplates and the results of thermal cycling tests between -5degC and 150degC are presented in this paper.