A new bond failure wire crater in surface mount device

Author

Koyama, H. ; Shiozaki, H. ; Okumura, I. ; Mizugashira, S. ; Higuchi, H. ; Ajiki, T.

Author_Institution

Matsushita Electron. Corp., Kyoto, Japan

fYear

1988

fDate

12-14 Apr 1988

Firstpage

59

Lastpage

63

Abstract

A new failure wire crater was studied in surface mount devices. It is defined as a peeling-off phenomenon of the wire ball from the Si substrate or insulator when soldering heat stress is present. It only occurs when the package absorbs a significant amount of water before soldering. To analyze this phenomenon, conditions of water absorption, soldering heat stress, wafer process (metallization and insulator materials) and assembly process (wire bonding) were investigated. From these results, it is found that cratering occurs when the Si nodules of Al-Si metallization damage the insulator at wire bonding

Keywords

failure analysis; integrated circuit technology; lead bonding; metallisation; soldering; surface mount technology; AlSi; Si nodules; Si substrate; assembly process; bond failure wire crater; insulator materials; metallization; package; peeling-off phenomenon; soldering heat stress; surface mount device; water absorption; wire ball; wire bonding; Absorption; Cable insulation; Inorganic materials; Metallization; Packaging; Soldering; Stress; Wafer bonding; Water heating; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23427

Filename

23427