DocumentCode
3295035
Title
Field Injection in Pb0.76Sn0.24 Te: in Films with Superimposed Magnetic Field
Author
Klimov, Alexander E. ; Shumsky, Vladimir N. ; Epov, Vladimir S.
Author_Institution
Russian Acad. of Sci., Novosibirsk
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
21
Lastpage
24
Abstract
In the present study, low-temperature electronic transport in Pb1-xSnxTe:In films with prevailing contact injection of charge carriers was examined. Data concerning the influence of magnetic field on the injection currents, and also on the transient currents observed following turn-on and turn-off of the field are reported. Possible mechanisms of observed phenomena are discussed.
Keywords
IV-VI semiconductors; charge injection; electrical contacts; indium; lead compounds; magnetoresistance; narrow band gap semiconductors; tin compounds; Pb0.76Sn0.24Te:In - System; charge carriers; contact injection; field injection; injection currents; low-temperature electronic transport; magnetoresistance; narrowband semiconductor films; superimposed magnetic field; transient currents; Charge carriers; Current measurement; Electric variables measurement; Electron traps; Magnetic field measurement; Magnetic fields; Magnetic films; Narrowband; Semiconductor films; Tellurium; contact injection; magnetoresistance; narrow-band semiconductor; traps;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292895
Filename
4292895
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