Fabrication of Polycrystalline 3C-SiC Microstructures

Author

Ohn, Chang-Min ; Lee, Jong-Hwa ; Chung, Gwiy-Sang

Author_Institution

Univ. of Ulsan, Ulsan

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

25

Lastpage

26

Abstract

Magnetron reactive ion etching (RIE) characteristic of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates are presented. The magnetron RIE can stably etch the poly 3C-SiC thin films at a lower ion energy (70 W) without any damages than the commercial RIE system. The best vertical structure was improved by the addition of 40% O₂ and 16% Ar with the CHF₃ reactive gas.

Keywords

crystal microstructure; semiconductor growth; semiconductor thin films; silicon compounds; sputter etching; wide band gap semiconductors; 3C-SiC thin films; Si; Si surface; SiC; SiC interface; magnetron reactive ion etching; polycrystalline microstructures; polycrystalline thin films; power 70 W; reactive gas; silicon substrates; thermal oxidization; Argon; Etching; Fabrication; Microstructure; Radio frequency; Saturation magnetization; Semiconductor thin films; Silicon carbide; Sputtering; Substrates; CHF3; M/NEMS; Polycrystalline 3C-SiC; RIE;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292896

Filename

4292896