On the capacitance of vacuum microelectronic devices with different field emitter shapes

Author

Wang, Baoping ; Tang, Yongming ; Sin, Johnny K O ; Poon, Vincent M C

Author_Institution

Dept. of Electron. Eng., Southeast Univ., Nanjing, China

fYear

1996

fDate

7-12 Jul 1996

Firstpage

509

Lastpage

513

Abstract

In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter

Keywords

anodes; capacitance; electric fields; finite difference methods; vacuum microelectronics; 4 micron; anode diameter; capacitance; diode vacuum microelectronic devices; electric field; field emitter shapes; field enhancement; finite difference method; tip-on-post field emitter; Anodes; Capacitance; Cathodes; Diodes; Finite difference methods; Microelectronics; Radio frequency; Shape; Silicon compounds; Structural engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601875

Filename

601875