• DocumentCode
    3295117
  • Title

    THB reliability research for fine pitch substrate

  • Author

    Feng, Weiwei ; Zhou, Jianwei ; Fu, Xingming ; Wang, Qian ; Lee, Jaisung

  • Author_Institution
    Samsung Semicond. (China) R&D Co., Ltd., Suzhou, China
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    219
  • Lastpage
    223
  • Abstract
    With plating bar pitch becoming finer, the risk of ion migration on package surface under temperature humidity bias (THB) tests will be raised. In our research on fine pitch products with operating voltages of 1.5 V, 1.8 V and 3.3 V, the effects of plating bar spacing and layout that may affect ion migration on the package surface in THB tests have been studied. The critical substrate plating bar spacing and bias values that cause ion migration have been determined. The effects of different PSR (green PSR and non-green PSR) on the ion migration phenomenon have also been evaluated. Static electric field simulations have been done to help analyze the effects of different plating bar layouts. A substrate design rule for fine pitch products has been established for improving THB reliability.
  • Keywords
    packaging; reliability; THB reliability research; THB test; fine pitch substrate; ion migration; package surface; plating bar layouts; plating bar pitch; static electric field simulation; temperature humidity bias; voltage 1.5 V to 3.3 V; Circuit testing; Failure analysis; Humidity; Packaging; Research and development; Semiconductor device reliability; Sockets; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232666
  • Filename
    5232666