DocumentCode
3295117
Title
THB reliability research for fine pitch substrate
Author
Feng, Weiwei ; Zhou, Jianwei ; Fu, Xingming ; Wang, Qian ; Lee, Jaisung
Author_Institution
Samsung Semicond. (China) R&D Co., Ltd., Suzhou, China
fYear
2009
fDate
6-10 July 2009
Firstpage
219
Lastpage
223
Abstract
With plating bar pitch becoming finer, the risk of ion migration on package surface under temperature humidity bias (THB) tests will be raised. In our research on fine pitch products with operating voltages of 1.5 V, 1.8 V and 3.3 V, the effects of plating bar spacing and layout that may affect ion migration on the package surface in THB tests have been studied. The critical substrate plating bar spacing and bias values that cause ion migration have been determined. The effects of different PSR (green PSR and non-green PSR) on the ion migration phenomenon have also been evaluated. Static electric field simulations have been done to help analyze the effects of different plating bar layouts. A substrate design rule for fine pitch products has been established for improving THB reliability.
Keywords
packaging; reliability; THB reliability research; THB test; fine pitch substrate; ion migration; package surface; plating bar layouts; plating bar pitch; static electric field simulation; temperature humidity bias; voltage 1.5 V to 3.3 V; Circuit testing; Failure analysis; Humidity; Packaging; Research and development; Semiconductor device reliability; Sockets; Substrates; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232666
Filename
5232666
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