Title :
Nucleation in Homoepitaxy on Ã\x9f-(2Ã\x974)(001) GaAs
Author :
Dmitriev, Dmitriy V. ; Galitsyn, Yuriy G. ; Mansurov, Vladimir G. ; Moshenko, Sergey P. ; Toropov, Alexander I.
Author_Institution :
SB RAS, Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
The analysis of experimental results on kinetics of the initial stage of growth on a surface beta-(2times4) (001)GaAs shows, that the process of growth starts from the adsorption of gallium atoms in a trenches of initial structure, i.e. phase transition beta-(2times4) - > alpha-(2x4)- nonrelaxed proceed, and then 2D-nucleus arise and epitaxial growth of a new layers of gallium arsenide continued.
Keywords :
III-V semiconductors; adsorption; epitaxial growth; gallium arsenide; nucleation; phase transformations; reaction kinetics; semiconductor growth; surface structure; 2D-nucleus; GaAs; adsorption; gallium atoms; homoepitaxial growth; nucleation; phase transition; reaction kinetics; surface beta-(2times4) (001) gallium arsenide; surface structure; trenches; Atomic layer deposition; Diffraction; Epitaxial growth; Gallium arsenide; Information analysis; Kinetic theory; Molecular beam epitaxial growth; Physics; Semiconductor process modeling; Solid state circuits;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292905
