Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon

Author

Mikhaylov, Boris I. ; Kamaev, Gennady N. ; Efremov, Mikhail D.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

58

Lastpage

60

Abstract

In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentration of defects with deep level on temperature stable conductivity was fulfilled. Shown that basis defects are explaining temperature stable of conductivity is divacancy (V₂) and divacancy-oxygen complexes (V₂O). The comparative analysis from test information showed that increase V₂O concentration was not only tied change V₂ concentration by anneals in temperature range 200~300degC.

Keywords

annealing; electrical conductivity; elemental semiconductors; radiation effects; silicon; vacancies (crystal); Si; annealed FZ silicon; deep level; defect concentration; divacancy-oxygen complexes; electron irradiated FZ silicon; point radiation defects; temperature 200 degC to 300 degC; temperature stable conductivity; Annealing; Conducting materials; Conductivity; Electrons; Photonic band gap; Physics; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; anneals defects; conductivity of FZ silicon; divacancy; electron irradiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292907

Filename

4292907