Title :
Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon
Author :
Mikhaylov, Boris I. ; Kamaev, Gennady N. ; Efremov, Mikhail D.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentration of defects with deep level on temperature stable conductivity was fulfilled. Shown that basis defects are explaining temperature stable of conductivity is divacancy (V2) and divacancy-oxygen complexes (V2O). The comparative analysis from test information showed that increase V2O concentration was not only tied change V2 concentration by anneals in temperature range 200~300degC.
Keywords :
annealing; electrical conductivity; elemental semiconductors; radiation effects; silicon; vacancies (crystal); Si; annealed FZ silicon; deep level; defect concentration; divacancy-oxygen complexes; electron irradiated FZ silicon; point radiation defects; temperature 200 degC to 300 degC; temperature stable conductivity; Annealing; Conducting materials; Conductivity; Electrons; Photonic band gap; Physics; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; anneals defects; conductivity of FZ silicon; divacancy; electron irradiation;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292907
