Fault localization by Dynamic Laser Stimulation extended testing

Author

Perdu, P.

Author_Institution

DCT/AQ/LE, CNES, Toulouse, France

fYear

2009

fDate

6-10 July 2009

Firstpage

182

Lastpage

190

Abstract

Up to date ULSI devices are triggering incredible challenges for End User Failure Analyst. Laser Stimulation (LS) techniques is one of the most adapted to face them. Static Laser Stimulation (SLS), with an appropriate choice of wavelength, has been widely use for leakage localization. More recently, Dynamic Laser Stimulation (DLS) has been applied to localize soft defects. It has been completed by Variation Mapping techniques (xVM). Today, Dynamic Laser Stimulation Extended testing, based on multi xVM and Full Dynamic Laser Stimulation (FDLS) open a wider range of applications for failure analysis and reliability purpose.

Keywords

ULSI; failure analysis; integrated circuit reliability; integrated circuit testing; laser beam applications; ULSI devices; dynamic laser stimulation extended testing; end user failure analyst; failure analysis; fault localization; static laser stimulation; variation mapping techniques; Atomic force microscopy; Electric variables; Failure analysis; Helium; Probes; Pulp manufacturing; Scanning electron microscopy; Silicides; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232671

Filename

5232671