Title :
Identification of Shallow Acceptors in Epitaxial GaN:Si
Author :
Korzhavina, Natalia S. ; Shamirzaev, Timur S. ; Zhuravlev, Constantin S. ; Mansurov, Vladimir G. ; Nikitin, Andrey U. ; Toropov, Alexander I.
Author_Institution :
SB RAS, Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (TSi). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at TSi <1350degC and Si on N state at TSi =1400degC.
Keywords :
III-V semiconductors; gallium compounds; impurity states; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; wide band gap semiconductors; GaN:Si; chemical nature; dominant acceptors; doping concentration; doping epitaxial layers; photoluminescence; shallow acceptors; temperature 1400 C; Doping; Electrons; Epitaxial layers; Excitons; Gallium nitride; Impurities; Microwave transistors; Photoluminescence; Photonic band gap; Temperature; Acceptor; GaN; photoluminescence;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292908
