Identification of Shallow Acceptors in Epitaxial GaN:Si

Author

Korzhavina, Natalia S. ; Shamirzaev, Timur S. ; Zhuravlev, Constantin S. ; Mansurov, Vladimir G. ; Nikitin, Andrey U. ; Toropov, Alexander I.

Author_Institution

SB RAS, Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

61

Lastpage

63

Abstract

Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (T_Si). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at T_Si <1350degC and Si on N state at T_Si =1400degC.

Keywords

III-V semiconductors; gallium compounds; impurity states; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; wide band gap semiconductors; GaN:Si; chemical nature; dominant acceptors; doping concentration; doping epitaxial layers; photoluminescence; shallow acceptors; temperature 1400 C; Doping; Electrons; Epitaxial layers; Excitons; Gallium nitride; Impurities; Microwave transistors; Photoluminescence; Photonic band gap; Temperature; Acceptor; GaN; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292908

Filename

4292908