Title :
Hot electron stress effect on dual-band power amplifier and integrated mixer-lna design for reliability
Author :
Yuan, J.S. ; Ma, J. ; Hsu, C.-W. ; Yeh, W.K.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in SpectreRF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier.
Keywords :
MOSFET; circuit reliability; low noise amplifiers; power amplifiers; MOSFET; SpectreRF simulation; channel hot-electron degradations; dual-band power amplifier; hot electron stress effect; integrated mixer-LNA design; integrated mixer-low noise amplifier; Degradation; Dual band; Electron mobility; Integrated circuit reliability; MOSFETs; Noise figure; Power amplifiers; Silicon compounds; Tensile stress; Threshold voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232674
