Title :
Can a MOSFET survive from multiple breakdowns?
Author :
Li, X. ; Tung, C.H. ; Pey, K.L.
Author_Institution :
Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
How can a metal-oxide-semiconductor (MOS) transistor suffer from multiple dielectric breakdowns (BD) with severe structural damages (e.g., local melting and metal migration) remain functional? Our results show that the amorphization of Si in the vicinity of the BD forms an effective p-n diode which prevents terminal short from happening when reverse-biased.
Keywords :
MOSFET; semiconductor device breakdown; MOSFET; dielectric breakdowns; Electric breakdown; MOSFET circuits;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232677
