Title :
A new temperature compensation technique for bandgap voltage references
Author :
Holman, W. Timothy
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
A new technique for high-order temperature compensation of bandgap voltage references is introduced and described. This method relies on the use of a “ΔVBE ladder” topology that allows the temperature coefficient of a bandgap reference to be adjusted to less than 5 ppm/°C without the need for complex circuitry. The technique has been verified experimentally and via PSpice simulation, and an improved version of the circuit is being implemented in a 2.0 μm BiCMOS process
Keywords :
BiCMOS analogue integrated circuits; compensation; energy gap; ladder networks; reference circuits; 2.0 micron; BiCMOS process; PSpice simulation; bandgap voltage reference; ladder topology; temperature compensation; BiCMOS integrated circuits; Circuit simulation; Circuit topology; Diodes; P-n junctions; Photonic band gap; Temperature dependence; Temperature distribution; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.539965
