• DocumentCode
    3295379
  • Title

    A new temperature compensation technique for bandgap voltage references

  • Author

    Holman, W. Timothy

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    12-15 May 1996
  • Firstpage
    385
  • Abstract
    A new technique for high-order temperature compensation of bandgap voltage references is introduced and described. This method relies on the use of a “ΔVBE ladder” topology that allows the temperature coefficient of a bandgap reference to be adjusted to less than 5 ppm/°C without the need for complex circuitry. The technique has been verified experimentally and via PSpice simulation, and an improved version of the circuit is being implemented in a 2.0 μm BiCMOS process
  • Keywords
    BiCMOS analogue integrated circuits; compensation; energy gap; ladder networks; reference circuits; 2.0 micron; BiCMOS process; PSpice simulation; bandgap voltage reference; ladder topology; temperature compensation; BiCMOS integrated circuits; Circuit simulation; Circuit topology; Diodes; P-n junctions; Photonic band gap; Temperature dependence; Temperature distribution; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-3073-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1996.539965
  • Filename
    539965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3295379