DocumentCode :
3295417
Title :
Building-in reliability and challenges in analysis in sub−100nm devices - An overview
Author :
Radhakrishnan, M.K.
Author_Institution :
NanoRel-Technical Consultants, 273, 18D Main, 6-Block, Koramangala, Bangalore 560095, India
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
150
Lastpage :
152
Abstract :
This paper reviews some of the recent trends in the fail site identification and physical analysis towards building-in reliability (BIR) in sub-100 nm devices.
Keywords :
failure analysis; nanoelectronics; reliability; reviews; building-in reliability; fail site identification; physical analysis; size 100 nm; sub100 nm devices; Chemical analysis; Chemical technology; Design engineering; Electrostatic discharge; Failure analysis; Materials reliability; Nanoscale devices; Physics; Process design; Reliability engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232680
Filename :
5232680
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3295417
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