Title :
Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters
Author :
Cherkaev, Aleksey S. ; Makarov, Evgeny A. ; Vorontsov, Yaroslav I. ; Kalinin, Sergey V.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by "FACT" software package, as well as volt-ampere characteristics of researched devices, that were really measured.
Keywords :
MOSFET; electronic engineering computing; semiconductor device models; software packages; FACT; MOS-transistors parameters; MicroTec-3.02 software package; two-dimensional modeling; Application software; Application specific integrated circuits; Boron; Circuit simulation; Doping profiles; Integrated circuit modeling; Integrated circuit packaging; Integrated circuit technology; Semiconductor process modeling; Software packages; Calibration; MOS-transistor; Modeling; TCAD; Technology;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292923
