DocumentCode
3295480
Title
Researchs of Temperature Influence on Breakdown Characteristics of Power Planar SOI MOSFET
Author
Artamonova, Eugenia A. ; Krasukov, Anton U.
Author_Institution
Moscow State Inst. of Electron. Eng., Moscow
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
105
Lastpage
106
Abstract
In this paper the researches of breakdown characteristics of power planar SOI MOSFET in on and off state is suggested to investigate the heat influence on device reliability.
Keywords
power MOSFET; power integrated circuits; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; breakdown characteristics; power planar SOI MOSFET; reliability; self- heating; silicon-on-insulator; temperature influence; Avalanche breakdown; Electric breakdown; Heating; MOSFET circuits; Power MOSFET; Power engineering and energy; Semiconductor optical amplifiers; Silicon on insulator technology; Temperature distribution; Thermal resistance; breakdown; numerical simulation; self-heating; silicon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292925
Filename
4292925
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