Title :
Researchs of Temperature Influence on Breakdown Characteristics of Power Planar SOI MOSFET
Author :
Artamonova, Eugenia A. ; Krasukov, Anton U.
Author_Institution :
Moscow State Inst. of Electron. Eng., Moscow
fDate :
June 1 2007-July 5 2007
Abstract :
In this paper the researches of breakdown characteristics of power planar SOI MOSFET in on and off state is suggested to investigate the heat influence on device reliability.
Keywords :
power MOSFET; power integrated circuits; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; breakdown characteristics; power planar SOI MOSFET; reliability; self- heating; silicon-on-insulator; temperature influence; Avalanche breakdown; Electric breakdown; Heating; MOSFET circuits; Power MOSFET; Power engineering and energy; Semiconductor optical amplifiers; Silicon on insulator technology; Temperature distribution; Thermal resistance; breakdown; numerical simulation; self-heating; silicon-on-insulator;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292925
