Title :
Design of highly efficient charge pump for energy harvesting RFID applications
Author :
Shabana, S. ; Thej, C. ; Sankar, H. ; Pandava, R. ; Dutta, Arin ; Singh, S.G.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Hyderabad, Hyderabad, India
Abstract :
This paper proposes an improved charge pump circuit for low voltage RFID applications. The architecture of charge transfer switch based dynamic charge pump has been modified to provide higher output voltage than existing one. This has been achieved by replacing the diode with a charge transfer block at the last stage of the dynamic CTS charge pump. The modified charge pump eliminates the threshold voltage loss and the effects of leakage currents. A 10-stage charge pump circuit with each pumping capacitance of 1pF is designed and simulated with an input voltage of 1V and clock frequency of 500MHz. The proposed charge-pump circuit is designed and simulated by Cadence virtuoso with UMC 0.18-μm CMOS technology parameters.
Keywords :
CMOS integrated circuits; clocks; energy harvesting; radiofrequency identification; 10-stage charge pump circuit; CMOS technology parameters; Cadence virtuoso; UMC; charge pump circuit; charge transfer switch based dynamic charge pump; clock frequency; dynamic CTS charge pump; energy harvesting RFID applications; frequency 500 MHz; highly efficient charge pump design; leakage currents; low voltage RFID applications; threshold voltage loss; voltage 1 V; Charge pumps; Charge transfer; Clocks; MOSFET circuits; Radiofrequency identification; Switches; Threshold voltage; Charge Transfer Switch (CTS); Charge pump (CP); MOSFET (MOS); Radio Frequency Identification (RFID); Radio frequency (RF);
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2012 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Hyderabad
Print_ISBN :
978-1-4673-5065-5
DOI :
10.1109/PrimeAsia.2012.6458625