Title :
Application of Field Plate to Increase Breakdown Voltage of DMOS
Author :
Kluchnikov, Alexey S. ; Krasukov, Anton Y.
Author_Institution :
Moscow State Inst. of Electron. Eng., Moscow
fDate :
June 1 2007-July 5 2007
Abstract :
This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.
Keywords :
MOS integrated circuits; electric breakdown; numerical analysis; technology CAD (electronics); transistors; DMOS transistors; Sentaurus TCAD; breakdown voltage; field plate application; numerical simulation; Avalanche breakdown; Breakdown voltage; Computational modeling; Doping profiles; Electric breakdown; Electrons; Numerical simulation; Power engineering and energy; Power semiconductor devices; Silicon; breakdown voltage; field plate; simulation;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292926
