• DocumentCode
    3295494
  • Title

    Application of Field Plate to Increase Breakdown Voltage of DMOS

  • Author

    Kluchnikov, Alexey S. ; Krasukov, Anton Y.

  • Author_Institution
    Moscow State Inst. of Electron. Eng., Moscow
  • fYear
    2007
  • fDate
    June 1 2007-July 5 2007
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    This paper presents a numerical simulation of the breakdown of DMOS transistors with the field plate. Sentaurus TCAD was used to simulate the breakdown.
  • Keywords
    MOS integrated circuits; electric breakdown; numerical analysis; technology CAD (electronics); transistors; DMOS transistors; Sentaurus TCAD; breakdown voltage; field plate application; numerical simulation; Avalanche breakdown; Breakdown voltage; Computational modeling; Doping profiles; Electric breakdown; Electrons; Numerical simulation; Power engineering and energy; Power semiconductor devices; Silicon; breakdown voltage; field plate; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
  • Conference_Location
    Erlagol, Altai
  • ISSN
    1815-3712
  • Print_ISBN
    978-5-7782-0752-3
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2007.4292926
  • Filename
    4292926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3295494