• DocumentCode
    3295507
  • Title

    Trapping/detrapping characteristics of electrons and holes under dynamic NBTI stress on HfO2 and HfSiON gate dielectrics

  • Author

    Wei-Liang Lin ; Lou, Jen-Chung ; Lee, Yao-Jen ; Chao, Tien-Sheng

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    122
  • Lastpage
    125
  • Abstract
    DNBTI on HfO2 and HfSiON has been investigated. The DNBTI model under NBTI/passivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.
  • Keywords
    CMOS integrated circuits; hafnium compounds; high-k dielectric thin films; silicon compounds; HfO2; HfSiON; charge current; dynamic negative bias temperature instability stress; gate dielectrics; passivated stress cycles; trapping-detrapping characteristics; Charge carrier processes; Charge pumps; Electron traps; Hafnium oxide; High K dielectric materials; Niobium compounds; Silicon; Stress; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232685
  • Filename
    5232685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3295507