Title :
Trapping/detrapping characteristics of electrons and holes under dynamic NBTI stress on HfO2 and HfSiON gate dielectrics
Author :
Wei-Liang Lin ; Lou, Jen-Chung ; Lee, Yao-Jen ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
DNBTI on HfO2 and HfSiON has been investigated. The DNBTI model under NBTI/passivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.
Keywords :
CMOS integrated circuits; hafnium compounds; high-k dielectric thin films; silicon compounds; HfO2; HfSiON; charge current; dynamic negative bias temperature instability stress; gate dielectrics; passivated stress cycles; trapping-detrapping characteristics; Charge carrier processes; Charge pumps; Electron traps; Hafnium oxide; High K dielectric materials; Niobium compounds; Silicon; Stress; Titanium compounds; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232685
