Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal

Author

Gounet, Pascal ; Mercier, Michele ; Serre, David ; Rue, Chad

Author_Institution

ST-Ericsson, Grenoble, France

fYear

2009

fDate

6-10 July 2009

Firstpage

94

Lastpage

99

Abstract

High-speed FIB silicon trenching is used to remove substrate materials around large structures on semiconductor devices. After removing the surrounding substrate material, it is possible to perform FIB cross-sectional analyses on structures that would normally be too large for such an approach. Through-silicon-vias (TSVs) are examined in detail, but other applications are also briefly described.

Keywords

elemental semiconductors; failure analysis; focused ion beam technology; semiconductor device reliability; silicon; sputter etching; cross-sectional analysis; failure analysis; high ion beam current; high-speed FIB silicon removal; semiconductor devices; silicon etching gas; silicon trenching; substrate material; through-silicon vias; Coaxial components; Delamination; Failure analysis; Ion beams; Performance analysis; Semiconductor device packaging; Semiconductor devices; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232689

Filename

5232689