Title :
Non-Volatile Phase Change Memory and Its Fabrication Technology
Author :
Balashov, Alexander G. ; Balan, Nikita N. ; Kalinin, Alexander V.
Author_Institution :
Moscow State Inst. of Electron. Eng., Moscow
fDate :
June 1 2007-July 5 2007
Abstract :
This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method assumes the application of the custom cluster equipment with a nanoimprint tool. This cluster is used to form additional layers on the CMOS wafer to create the storage array. UV nanoimprint is used instead of the optical lithography.
Keywords :
CMOS integrated circuits; nanolithography; phase change materials; CMOS wafer; UV nanoimprint; access transistor; cluster equipment; fabrication technology; memory array; nanoimprint tool; nonvolatile phase change memory; optical lithography; storage array; Conferences; Fabrication; Material storage; Nanostructured materials; Nonvolatile memory; Phase change materials; Phase change memory; Phased arrays; Planarization; Random access memory; UV nanoimprint; non-volatile memory; phase change material;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292931
