DocumentCode
3295595
Title
Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators
Author
Baranouski, Aleh K.
Author_Institution
Inst. of Tech. Protection of Inf., Minsk
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
123
Lastpage
124
Abstract
The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.
Keywords
Markov processes; avalanche diodes; random number generation; avalanche pulse rate instability; discrete Markov process; random number generator; silicon diode; Avalanche breakdown; Conferences; Cryptographic protocols; Diodes; Pulse generation; Pulse measurements; Random number generation; Silicon; Telecommunication network reliability; Time measurement; avalanche pulse rate; microplasma breakdown; random number generator; silicon diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292932
Filename
4292932
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