Title :
Avalanche Pulse Rate Instability in Silicon Diodes Used in Random Number Generators
Author :
Baranouski, Aleh K.
Author_Institution :
Inst. of Tech. Protection of Inf., Minsk
fDate :
June 1 2007-July 5 2007
Abstract :
The avalanche pulse rate instability in silicon diodes is investigated to use these diodes in random number generators. It is experimentally proved that bilevel fluctuations of pulse rate may be described as discrete Markov process.
Keywords :
Markov processes; avalanche diodes; random number generation; avalanche pulse rate instability; discrete Markov process; random number generator; silicon diode; Avalanche breakdown; Conferences; Cryptographic protocols; Diodes; Pulse generation; Pulse measurements; Random number generation; Silicon; Telecommunication network reliability; Time measurement; avalanche pulse rate; microplasma breakdown; random number generator; silicon diodes;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292932
