DocumentCode
3295616
Title
Calculation of Transverse Magnetoresistance in Isotropic p-Type Polycrystalline Silicon
Author
Moiseev, Alexey G.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
129
Lastpage
130
Abstract
Calculation of the dependence of the transverse magnetoresistance in isotropic p-type polycrystalline silicon on a magnetic field is presented. The case is considered when holes relaxation is determined by scattering on both the grain boundaries potential barriers and the disordered net of silicon atoms.
Keywords
elemental semiconductors; grain boundaries; magnetic fields; magnetic relaxation; magnetoresistance; silicon; Si; disordered net; grain boundaries; holes relaxation; isotropic polycrystalline silicon; magnetic field; p-type polycrystalline silicon; potential barriers; transverse magnetoresistance; Charge carriers; Conductivity; Equations; Grain boundaries; Kinetic theory; Magnetic analysis; Magnetic fields; Magnetoresistance; Scattering; Silicon; Magnetoresistance; isotropic p-type polycrystalline silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292934
Filename
4292934
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