Title :
Modeling of Ionic Conductivity Dielectric with Non-uniform Blocking Surface
Author :
Perov, Gennady V. ; Shauerman, Alexander A.
Author_Institution :
Siberian State Univ. of Telecommun. & Inf., Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
The one-dimensional model of ionic conductivity in dielectric layers with a non-uniform blocking surface of the semiconductor with specified geometrical horizontal structure is developed. The model is based on the results of research of a relaxation of ions in dielectric on polycrystalline silicon and allows predicting behavior of ions depending on a roughness of border.
Keywords :
dielectric thin films; ionic conductivity; silicon; Si; border roughness; dielectrics; ionic conductivity; nonuniform blocking surface; polycrystals; Conductive films; Conductivity; Dielectrics; Helium; Polarization; Predictive models; Rough surfaces; Silicon; Solid modeling; Surface roughness;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292935
