• DocumentCode
    3295676
  • Title

    Degradation behavior of TaYOx-based metal-insulator-metal capacitors

  • Author

    Hota, M.K. ; Mahata, C. ; Mallik, S. ; Sarkar, C.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Characteristics under constant voltage stress from 5 V to 7 V were carried out to monitor the degradation behavior of TaYOx dielectric layers. It is found that capacitance and the voltage at maximum capacitance gradually increase during constant voltage stressing. However, the leakage current density remains almost constant with the injected charge for a certain period of time.
  • Keywords
    MIM devices; capacitors; current density; leakage currents; tantalum compounds; TaYOx; constant voltage stress; degradation behavior; dielectric layers; leakage current density; metal-insulator-metal capacitors; voltage 5 V to 7 V; Degradation; Eddy currents; Educational institutions; Environmental management; Knowledge management; Mechanical variables control; Oceans; Process control; Resource management; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-5596-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2010.5531974
  • Filename
    5531974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3295676