Logic failure analysis 65/45nm device using RCI & nano scale probe

Author

Cho, S.J. ; Kim, T.E. ; Hong, J.K. ; Hong, J.T. ; Kim, H.S. ; Han, Y.W. ; Kwon, S.D. ; Oh, Y.S.

Author_Institution

Failure Anal. Group, Samsung Electron. Co. Ltd. Semicond. Bus., Yongin, South Korea

fYear

2009

fDate

6-10 July 2009

Firstpage

50

Lastpage

53

Abstract

Scan chain failure analysis is more difficult and complicated compared to memory analysis and analysis of defect monitoring test element group (DTEG) which has a large area is also difficult. This paper has verified that various defects of logic process sub 65nm device are easily analyzed through Resistive Contrast Imaging (RCI) and nanoprobe. In addition, Metal5 (M5) bridge defect (Short case) was detected in failure of scan ATPG (Automatic Test Pattern Generation) which has long failing nets and by discovering Via4 (V4) open defect (Open case) by Unetch, it was confirmed that it is possible to analyze high resistance Via failure. And it was verified that position of Cu line void of metal7 (M7) can be localized at high level metal layer. It is judged that it will be used usefully in failure analysis sub 65nm in the future as a technique utilizing principle of RCI and nanoprobe and also it will make lots of contributions to improvement of yield.

Keywords

automatic test pattern generation; electronic engineering computing; failure analysis; logic circuits; ATPG; Metal5; RCI; Via4 open defect; automatic test pattern generation; bridge defect; defect monitoring test element group; high level metal layer; logic failure analysis; metal7; nanoscale probe; resistive contrast imaging; scan chain failure analysis; size 65 nm; Automatic test pattern generation; Bridges; Condition monitoring; Failure analysis; Image analysis; Logic devices; Nanoscale devices; Pattern analysis; Probes; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232699

Filename

5232699