Advanced failure analysis of photon emission on FEOL failing of 45nm technology node

Author

Changqing, Chen ; Boon, Ang Ghim ; Peng, Ng Hui ; Hong, Yip Kim ; Qingxiao, Wang

Author_Institution

Global Foundries, Singapore, Singapore

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

4

Abstract

Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of the unit failed in the FEOL. Thermally-induced Voltage Alteration (TIVA) and Light-induce Voltage Alteration (LIVA) were performed on the failed device. Detailed analysis on the difference and nature of TIVA and LIVA were studied in this real case. TEM and EDX result also confirm the electrical FA result.

Keywords

X-ray chemical analysis; emission; failure analysis; integrated circuit reliability; thermal analysis; transmission electron microscopy; EDX; FEOL; IC device; TEM; active photon probing; electrical FA; failure site isolation; global failure analysis techniques; light-induce voltage alteration; photon emission; size 45 nm; thermal-induced voltage alteration; Charge carrier processes; Condition monitoring; Failure analysis; Foundries; Isolation technology; Optical beams; Photonic integrated circuits; Silicon; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5531981

Filename

5531981